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FDME510PZT

FDME510PZT onsemi


fdme510pzt-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 20V 6A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
auf Bestellung 35000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.55 EUR
10000+0.53 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDME510PZT onsemi

Description: MOSFET P-CH 20V 6A MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: MicroFet 1.6x1.6 Thin, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V.

Weitere Produktangebote FDME510PZT nach Preis ab 0.55 EUR bis 1.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FDME510PZT FDME510PZT Hersteller : onsemi / Fairchild FDME510PZT_D-2312422.pdf MOSFETs -20V P-Channel PowerTrench
auf Bestellung 13749 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.85 EUR
10+0.84 EUR
100+0.72 EUR
500+0.63 EUR
1000+0.58 EUR
5000+0.55 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDME510PZT FDME510PZT Hersteller : onsemi fdme510pzt-d.pdf Description: MOSFET P-CH 20V 6A MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
auf Bestellung 39867 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
16+1.15 EUR
100+0.90 EUR
500+0.76 EUR
1000+0.62 EUR
2000+0.58 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
FDME510PZT Hersteller : ONSEMI fdme510pzt-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -15A; 2.1W; MicroFET
Mounting: SMD
Case: MicroFET
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -15A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDME510PZT Hersteller : ONSEMI fdme510pzt-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -15A; 2.1W; MicroFET
Mounting: SMD
Case: MicroFET
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -15A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH