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FDME905PT

FDME905PT onsemi

fdme905pt-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.52 EUR
10000+0.48 EUR
15000+0.47 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDME905PT onsemi

Description: MOSFET P-CH 12V 8A MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: MicroFet 1.6x1.6 Thin, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V.

Weitere Produktangebote FDME905PT nach Preis ab 0.48 EUR bis 1.97 EUR

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FDME905PT FDME905PT Hersteller : onsemi / Fairchild FDME905PT_D-2312423.pdf MOSFETs -12V P-Channel PowerTrench MOSFET
auf Bestellung 1749 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.59 EUR
10+1.09 EUR
100+0.76 EUR
500+0.6 EUR
1000+0.51 EUR
5000+0.48 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDME905PT FDME905PT Hersteller : onsemi fdme905pt-d.pdf Description: MOSFET P-CH 12V 8A MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: MicroFet 1.6x1.6 Thin
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2315 pF @ 6 V
auf Bestellung 23587 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
14+1.28 EUR
100+0.87 EUR
500+0.69 EUR
1000+0.58 EUR
2000+0.57 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
FDME905PT FDME905PT Hersteller : ON Semiconductor fdme905pt-d.pdf Trans MOSFET P-CH 12V 8A 6-Pin MicroFET T/R
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FDME905PT Hersteller : ONSEMI fdme905pt-d.pdf FDME905PT SMD P channel transistors
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