FDMS001N025DSD onsemi

Description: MOSFET 2N-CH 25V 19A 8PQFN, Part Status: Obsolete, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 104nC @ 10V, Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 0.92mOhm @ 38A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 13V, 5105pF @ 13V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc), Drain to Source Voltage (Vdss): 25V, Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).