FDMS3600AS onsemi / Fairchild
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Technische Details FDMS3600AS onsemi / Fairchild
Description: MOSFET 2N-CH 25V 15A/30A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, 2.5W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 15A, 30A, Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V, Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: Power56.
Weitere Produktangebote FDMS3600AS
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMS3600AS | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 25V 15A/30A 8-Pin Power 56 EP T/R |
Produkt ist nicht verfügbar |
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FDMS3600AS | Hersteller : onsemi |
Description: MOSFET 2N-CH 25V 15A/30A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W, 2.5W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A, 30A Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
Produkt ist nicht verfügbar |