FDMS3602AS ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 182+ | 1.3 EUR |
| 250+ | 1.27 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.21 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
182 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS3602AS ON Semiconductor
Description: SMALL SIGNAL FIELD-EFFECT TRANSI, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, 2.5W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 15A, 26A, Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V, Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active.
Weitere Produktangebote FDMS3602AS nach Preis ab 1.96 EUR bis 1.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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FDMS3602AS | Fairchild Semiconductor |
 Description: SMALL SIGNAL FIELD-EFFECT TRANSIPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W, 2.5W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A, 26A Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active |
auf Bestellung 14975 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3602AS | ON Semiconductor / Fairchild |
MOSFET PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET |
auf Bestellung 2430 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS3602AS |
|
Hersteller: Fairchild Semiconductor
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W, 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W, 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
auf Bestellung 14975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 318+ | 1.96 EUR |
| FDMS3602AS |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET
MOSFET PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)