FDMS3602AS ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 182+ | 1.26 EUR |
| 250+ | 1.25 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.19 EUR |
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Technische Details FDMS3602AS ON Semiconductor
Description: SMALL SIGNAL FIELD-EFFECT TRANSI, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk, Part Status: Active, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V, Current - Continuous Drain (Id) @ 25°C: 15A, 26A, Drain to Source Voltage (Vdss): 25V, Power - Max: 2.2W, 2.5W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical.
Weitere Produktangebote FDMS3602AS nach Preis ab 1.96 EUR bis 1.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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FDMS3602AS | Fairchild Semiconductor |
 Description: SMALL SIGNAL FIELD-EFFECT TRANSIMounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V Current - Continuous Drain (Id) @ 25°C: 15A, 26A Drain to Source Voltage (Vdss): 25V Power - Max: 2.2W, 2.5W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical |
auf Bestellung 14975 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3602AS | ON Semiconductor / Fairchild |
MOSFET PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET |
auf Bestellung 2430 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS3602AS |
|
Hersteller: Fairchild Semiconductor
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 15A, 26A
Drain to Source Voltage (Vdss): 25V
Power - Max: 2.2W, 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 15A, 26A
Drain to Source Voltage (Vdss): 25V
Power - Max: 2.2W, 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
auf Bestellung 14975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 318+ | 1.96 EUR |
| FDMS3602AS |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET
MOSFET PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)