FDMS3602AS

FDMS3602AS Fairchild Semiconductor


FAIR-S-A0002363564-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W, 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
auf Bestellung 14975 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
318+1.65 EUR
Mindestbestellmenge: 318
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Technische Details FDMS3602AS Fairchild Semiconductor

Description: SMALL SIGNAL FIELD-EFFECT TRANSI, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, 2.5W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 15A, 26A, Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V, Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active.

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FDMS3602AS FDMS3602AS Hersteller : ON Semiconductor / Fairchild FDMS3602AS-D-1808026.pdf MOSFET PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET
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