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FDMS36101L-F085 onsemi


fdms36101l-f085-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 100V 38A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Qualification: AEC-Q101
Grade: Automotive
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Technische Details FDMS36101L-F085 onsemi

Description: MOSFET N-CH 100V 38A POWER56, Supplier Device Package: Power56, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 94W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3945 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Qualification: AEC-Q101, Grade: Automotive.

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FDMS36101L-F085 FDMS36101L-F085 onsemi fdms36101l-f085-d.pdf Description: MOSFET N-CH 100V 38A POWER56
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
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FDMS36101L-F085 FDMS36101L-F085 ON Semiconductor / Fairchild FDMS36101L_F085-1123125.pdf MOSFET NMOS PWR56 100V 26 MOHM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS36101L-F085 fdms36101l-f085-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 100V 38A POWER56
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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FDMS36101L-F085 FDMS36101L_F085-1123125.pdf
Hersteller: ON Semiconductor / Fairchild
MOSFET NMOS PWR56 100V 26 MOHM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH