FDMS4D5N08LC onsemi

Description: MOSFET N-CH 80V 17A/116A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 116A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 37A, 10V, Power Dissipation (Max): 2.5W (Ta), 113.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 210µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V.