FDMS8020 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Supplier Device Package: 8-PQFN (5x6)
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.8 EUR |
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Technische Details FDMS8020 onsemi
Description: MOSFET N-CH 30V 26A/42A 8PQFN, Supplier Device Package: 8-PQFN (5x6), Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 65W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDMS8020 nach Preis ab 0.93 EUR bis 2.97 EUR
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FDMS8020 | Hersteller : onsemi / Fairchild |
MOSFET 30V 42A 2.5mohms NCh PowerTrench MOSFET |
auf Bestellung 42065 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8020 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 26A/42A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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