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FDMS8570S

FDMS8570S Fairchild Semiconductor

FAIR-S-A0002363806-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: 28A, 25V, 0.0028OHM, N-CHANNEL,
Input Capacitance (Ciss) (Max) @ Vds: 2825 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 7113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
544+0.89 EUR
Mindestbestellmenge: 544
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDMS8570S Fairchild Semiconductor

Description: 28A, 25V, 0.0028OHM, N-CHANNEL,, Input Capacitance (Ciss) (Max) @ Vds: 2825 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Power Dissipation (Max): 2.5W (Ta), 48W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk.

Weitere Produktangebote FDMS8570S nach Preis ab 0.89 EUR bis 0.89 EUR

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FDMS8570S FDMS8570S onsemi FAIR-S-A0002363806-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2825 pF @ 13 V
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
544+0.89 EUR
Mindestbestellmenge: 544
Im Einkaufswagen  Stück im Wert von  UAH
FDMS8570S FDMS8570S ON Semiconductor / Fairchild FDMS8570S-1119503.pdf MOSFET 25/12V Dual Cool PowerTrench MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDMS8570S FAIR-S-A0002363806-1.pdf?t.download=true&u=5oefqw
FDMS8570S
Hersteller: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2825 pF @ 13 V
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
544+0.89 EUR
Mindestbestellmenge: 544
Im Einkaufswagen  Stück im Wert von  UAH
FDMS8570S FDMS8570S-1119503.pdf
FDMS8570S
Hersteller: ON Semiconductor / Fairchild
MOSFET 25/12V Dual Cool PowerTrench MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH