FDMS86369 onsemi

Description: FET 80V 7.5MOHM PQFN8, Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-DFNW (5.2x6.3), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 107W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 65A, 10V, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).