FDMS86581-F085 ON Semiconductor / Fairchild
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Technische Details FDMS86581-F085 ON Semiconductor / Fairchild
Description: MOSFET N-CHANNEL 60V 30A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V, Power Dissipation (Max): 50W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 881 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote FDMS86581-F085
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMS86581-F085 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 30A 8-Pin PQFN EP T/R Automotive AEC-Q101 |
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FDMS86581-F085 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 30A Automotive 8-Pin PQFN EP T/R |
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FDMS86581-F085 | Hersteller : onsemi |
Description: MOSFET N-CHANNEL 60V 30A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Power Dissipation (Max): 50W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 881 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |