FDMS86581-F085 ON Semiconductor / Fairchild

Description: MOSFET N-CHANNEL 60V 30A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 881 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 50W (Tj), Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).