Produkte > EVVO > FDN337N-EV
FDN337N-EV

FDN337N-EV EVVO


5272_FDN337N-EV.pdf
Hersteller: EVVO
Description: MOSFET N-CH 30V 2.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2574 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
143+0.12 EUR
163+0.11 EUR
194+0.091 EUR
250+0.083 EUR
500+0.078 EUR
1000+0.074 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FDN337N-EV EVVO

Description: MOSFET N-CH 30V 2.2A SOT-23, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 460mW (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote FDN337N-EV

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FDN337N-EV FDN337N-EV Hersteller : EVVO 5272_FDN337N-EV.pdf Description: MOSFET N-CH 30V 2.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH