FDN5632N-F085 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 1.7A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V
Qualification: AEC-Q101
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Technische Details FDN5632N-F085 onsemi
Description: MOSFET N-CH 60V 1.7A SUPERSOT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 82mOhm @ 1.7A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote FDN5632N-F085 nach Preis ab 0.45 EUR bis 2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FDN5632N-F085 | onsemi |
Description: MOSFET N-CH 60V 1.7A SUPERSOT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 1.7A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 104036 Stücke: Lieferzeit 10-14 Tag (e) |
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FDN5632N-F085 | onsemi |
MOSFETs Trans MOS N-Ch 60V 1.7A |
auf Bestellung 125162 Stücke: Lieferzeit 10-14 Tag (e) |
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FDN5632N_F085 | Fairchild Semiconductor |
Description: MOSFET N-CH 60V 1.7A SSOT3 |
auf Bestellung 4294967295 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FDN5632N_F085 | Fairchild Semiconductor |
Description: MOSFET N-CH 60V 1.7A SSOT3 |
auf Bestellung 13848 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FDN5632N_F085 | Fairchild Semiconductor |
Description: MOSFET N-CH 60V 1.7A SSOT3 |
auf Bestellung 393000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDN5632N-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 1.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 1.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 104036 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.99 EUR |
| 17+ | 1.25 EUR |
| 50+ | 0.92 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.63 EUR |
| FDN5632N-F085 |
|
Hersteller: onsemi
MOSFETs Trans MOS N-Ch 60V 1.7A
MOSFETs Trans MOS N-Ch 60V 1.7A
auf Bestellung 125162 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2 EUR |
| 10+ | 0.93 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.56 EUR |
| 3000+ | 0.45 EUR |
| FDN5632N_F085 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 1.7A SSOT3
Description: MOSFET N-CH 60V 1.7A SSOT3
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)
| FDN5632N_F085 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 1.7A SSOT3
Description: MOSFET N-CH 60V 1.7A SSOT3
auf Bestellung 13848 Stücke:
Lieferzeit 10-14 Tag (e)
| FDN5632N_F085 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 1.7A SSOT3
Description: MOSFET N-CH 60V 1.7A SSOT3
auf Bestellung 393000 Stücke:
Lieferzeit 10-14 Tag (e)