auf Bestellung 982 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.10 EUR |
| 10+ | 2.64 EUR |
| 100+ | 1.81 EUR |
| 500+ | 1.45 EUR |
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Technische Details FDP045N10A UMW
Description: MOSFET N-CH 100V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V.
Weitere Produktangebote FDP045N10A
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FDP045N10A | Hersteller : onsemi |
 Description: MOSFET N-CH 100V 120A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V |
Produkt ist nicht verfügbar |
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| FDP045N10A | Hersteller : onsemi |
FET 100V 4.5 MOHM TO220 |
Produkt ist nicht verfügbar |