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FDP045N10A

FDP045N10A UMW


5cd42b3c3a7ce0f8c5424f56f2221120.pdf
Hersteller: UMW
Description: MOSFET N-CH 100V 120A TO220
Packaging: Tube
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.42 EUR
100+1.66 EUR
500+1.33 EUR
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Technische Details FDP045N10A UMW

Description: MOSFET N-CH 100V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V.

Weitere Produktangebote FDP045N10A

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FDP045N10A onsemi 5cd42b3c3a7ce0f8c5424f56f2221120.pdf Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP045N10A onsemi 5cd42b3c3a7ce0f8c5424f56f2221120.pdf FET 100V 4.5 MOHM TO220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP045N10A 5cd42b3c3a7ce0f8c5424f56f2221120.pdf
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP045N10A 5cd42b3c3a7ce0f8c5424f56f2221120.pdf
Hersteller: onsemi
FET 100V 4.5 MOHM TO220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH