FDP090N10 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 55+ | 3.24 EUR |
| 1000+ | 2.64 EUR |
| 2000+ | 2.58 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
55 Stücke
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Technische Details FDP090N10 ON Semiconductor
Description: MOSFET N-CH 100V 75A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8225 pF @ 25 V.
Weitere Produktangebote FDP090N10 nach Preis ab 2.71 EUR bis 7.94 EUR
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FDP090N10 | ON Semiconductor |
 Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP090N10 | onsemi / Fairchild |
MOSFETs 100V 75A N-Chan PowerTrench |
auf Bestellung 7984 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP090N10 | onsemi |
Description: MOSFET N-CH 100V 75A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8225 pF @ 25 V |
auf Bestellung 11654 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDP090N10 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 3.53 EUR |
| 1000+ | 2.83 EUR |
| 2000+ | 2.71 EUR |
| FDP090N10 |
|
Hersteller: onsemi / Fairchild
MOSFETs 100V 75A N-Chan PowerTrench
MOSFETs 100V 75A N-Chan PowerTrench
auf Bestellung 7984 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.99 EUR |
| 10+ | 3.09 EUR |
| 100+ | 3.01 EUR |
| FDP090N10 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8225 pF @ 25 V
Description: MOSFET N-CH 100V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8225 pF @ 25 V
auf Bestellung 11654 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.94 EUR |
| 10+ | 5.25 EUR |
| 50+ | 4.09 EUR |
| 100+ | 3.71 EUR |
| 500+ | 3.06 EUR |