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Technische Details FDP2614 onsemi / Fairchild
Description: MOSFET N-CH 200V 62A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 260W (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote FDP2614 nach Preis ab 3.65 EUR bis 9.26 EUR
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FDP2614 | onsemi |
 Description: MOSFET N-CH 200V 62A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 13354 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDP2614 | ON Semiconductor |
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auf Bestellung 3960 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDP2614 |
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Hersteller: onsemi
Description: MOSFET N-CH 200V 62A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 200V 62A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 13354 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.26 EUR |
| 50+ | 4.86 EUR |
| 100+ | 4.43 EUR |
| 500+ | 3.69 EUR |
| 1000+ | 3.65 EUR |
| FDP2614 |
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Hersteller: ON Semiconductor
auf Bestellung 3960 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH