auf Bestellung 2747 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.02 EUR |
| 10+ | 4.52 EUR |
| 25+ | 4.26 EUR |
| 100+ | 3.70 EUR |
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Technische Details FDP26N40 onsemi / Fairchild
Description: MOSFET N-CH 400V 26A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 13A, 10V, Power Dissipation (Max): 265W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 25 V.
Weitere Produktangebote FDP26N40
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDP26N40 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 400V 26A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| FDP26N40 | Hersteller : ONSEMI |
FDP26N40 THT N channel transistors |
Produkt ist nicht verfügbar |
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FDP26N40 | Hersteller : onsemi |
Description: MOSFET N-CH 400V 26A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 13A, 10V Power Dissipation (Max): 265W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 25 V |
Produkt ist nicht verfügbar |