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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.05 EUR |
| 10+ | 8.61 EUR |
| 25+ | 7.81 EUR |
| 100+ | 7.16 EUR |
| 250+ | 6.76 EUR |
| 500+ | 6.34 EUR |
| 800+ | 5.68 EUR |
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Technische Details FDP2D9N12C onsemi
Description: PTNG 120V N-FET TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 210A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V, Power Dissipation (Max): 2.4W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 4V @ 686µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 60 V.
Weitere Produktangebote FDP2D9N12C
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FDP2D9N12C | Hersteller : ON Semiconductor |
 N-Channel Shielded Gate Power Trench MOSFET 120 V, 2.9 mW, 210 A, Single N-Channel |
Produkt ist nicht verfügbar |
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FDP2D9N12C | Hersteller : onsemi |
Description: PTNG 120V N-FET TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 210A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 2.4W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 686µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 60 V |
Produkt ist nicht verfügbar |