FDP5800 Fairchild
Produktcode: 60606
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Lieblingsprodukt
Hersteller: Fairchild
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 60 В
Durchlasswiderstand Rds(on), Ohm: 6 мОм
Montage: THT
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Weitere Produktangebote FDP5800 nach Preis ab 2.25 EUR bis 6.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDP5800 | onsemi |
Description: MOSFET N-CH 60V 14A/80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 542 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP5800 | onsemi |
MOSFETs 60V N-Ch Logic Level MOSFET |
auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDP5800 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 14A/80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 14A/80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 542 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.12 EUR |
| 10+ | 3.99 EUR |
| 100+ | 2.77 EUR |
| 500+ | 2.25 EUR |
| FDP5800 |
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Hersteller: onsemi
MOSFETs 60V N-Ch Logic Level MOSFET
MOSFETs 60V N-Ch Logic Level MOSFET
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.43 EUR |
| 10+ | 3.67 EUR |
| 100+ | 3.12 EUR |