FDP8447L onsemi
Hersteller: onsemiDescription: MOSFET N-CH 40V 12A/50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
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Technische Details FDP8447L onsemi
Description: MOSFET N-CH 40V 12A/50A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V, Power Dissipation (Max): 2W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V.
Weitere Produktangebote FDP8447L
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDP8447L | Hersteller : onsemi / Fairchild |
MOSFETs 40V N-CH PowerTrench MOSFET |
Produkt ist nicht verfügbar |
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FDP8447L | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 60W; TO220-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 100A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 13.7mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |