FDP86363-F085 onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 1+ | 5.49 EUR |
| 10+ | 4.59 EUR |
| 50+ | 3.36 EUR |
| 100+ | 3.08 EUR |
| 1000+ | 2.83 EUR |
| 2500+ | 2.66 EUR |
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Technische Details FDP86363-F085 onsemi / Fairchild
Description: MOSFET N-CH 80V 110A TO220-3, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Last Time Buy, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote FDP86363-F085 nach Preis ab 3.48 EUR bis 7.46 EUR
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FDP86363-F085 | onsemi |
 Description: MOSFET N-CH 80V 110A TO220-3Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 176 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDP86363-F085 | ON Semiconductor |
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auf Bestellung 42400 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDP86363-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 110A TO220-3
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 80V 110A TO220-3
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.46 EUR |
| 50+ | 3.83 EUR |
| 100+ | 3.48 EUR |
| FDP86363-F085 |
|
Hersteller: ON Semiconductor
auf Bestellung 42400 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH