FDP8870 ON Semiconductor
auf Bestellung 4570 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 2.31 EUR |
| 74+ | 2.05 EUR |
| 79+ | 1.84 EUR |
| 83+ | 1.69 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDP8870 ON Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V.
Weitere Produktangebote FDP8870
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
|
|
FDP8870 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 30V 19A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
|
|
|
FDP8870 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 19A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
|
 |
FDP8870 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 19A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|
 |
FDP8870 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 156A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V |
Produkt ist nicht verfügbar |
|
 |
FDP8870 | Hersteller : Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 1 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V |
Produkt ist nicht verfügbar |
|
 |
FDP8870 | Hersteller : onsemi / Fairchild |
MOSFET 30V N-Channel PowerTrench |
Produkt ist nicht verfügbar |
|
 |
FDP8870 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 147A; 160W; TO220AB Mounting: THT Power dissipation: 160W Polarisation: unipolar Drain current: 147A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 6.5mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |