FDP8870 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 156A TO-220AB
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
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Technische Details FDP8870 onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 160W (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V.
Weitere Produktangebote FDP8870
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDP8870 | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 1 Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FDP8870 | onsemi / Fairchild |
MOSFET 30V N-Channel PowerTrench |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDP8870 |
|
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDP8870 |
|
Hersteller: onsemi / Fairchild
MOSFET 30V N-Channel PowerTrench
MOSFET 30V N-Channel PowerTrench
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH