
FDPF041N06BL1 Fairchild Semiconductor

Description: MOSFET N-CH 60V 77A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 77A, 10V
Power Dissipation (Max): 44.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5690 pF @ 30 V
auf Bestellung 315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
315+ | 1.85 EUR |
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Technische Details FDPF041N06BL1 Fairchild Semiconductor
Description: MOSFET N-CH 60V 77A TO220F, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 77A, 10V, Power Dissipation (Max): 44.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5690 pF @ 30 V.
Weitere Produktangebote FDPF041N06BL1
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FDPF041N06BL1 | Hersteller : ON Semiconductor |
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FDPF041N06BL1 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDPF041N06BL1 | Hersteller : ON Semiconductor |
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FDPF041N06BL1 | Hersteller : onsemi / Fairchild |
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