FDPF12N50FT Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
auf Bestellung 24145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 235+ | 2.08 EUR |
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Technische Details FDPF12N50FT Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V.
Weitere Produktangebote FDPF12N50FT nach Preis ab 2.59 EUR bis 3.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDPF12N50FT | Hersteller : onsemi / Fairchild |
MOSFET 500V N-Channel |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF12N50FT | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 11.5A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |