FDPF13N50NZ ON Semiconductor / Fairchild
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Technische Details FDPF13N50NZ ON Semiconductor / Fairchild
Description: 1-ELEMENT, N-CHANNEL, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A, Rds On (Max) @ Id, Vgs: 540mOhm @ 6A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F, Part Status: Active, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote FDPF13N50NZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FDPF13N50NZ | Hersteller : ON Semiconductor |
 TRANS MOSFET N-CH 500V 12A 3-PIN(3+TAB) TO-220F TUBE |
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FDPF13N50NZ | Hersteller : Fairchild Semiconductor |
Description: 1-ELEMENT, N-CHANNEL Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 540mOhm @ 6A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |