FDPF15N65 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 650V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3095 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 650V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3095 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.89 EUR |
| 50+ | 2.21 EUR |
| 100+ | 2.15 EUR |
Produktrezensionen
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Technische Details FDPF15N65 onsemi
Description: MOSFET N-CH 650V 15A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 7.5A, 10V, Power Dissipation (Max): 38.5W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3095 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote FDPF15N65 nach Preis ab 2.18 EUR bis 5.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
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FDPF15N65 | Hersteller : onsemi / Fairchild | MOSFETs 650V 15A 0.44OHMS NCH POWER TRENCH |
auf Bestellung 4305 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF15N65 | Hersteller : ONSEMI |
 Description: ONSEMI - FDPF15N65 - Leistungs-MOSFET, n-Kanal, 650 V, 15 A, 0.36 ohm, TO-220F, DurchsteckmontagetariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 38.5W Bauform - Transistor: TO-220F Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.36ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 918 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDPF15N65 | Hersteller : FAIRCHILD |
auf Bestellung 114000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDPF15N65 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF15N65 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FDPF15N65 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 60A; 38.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220FP On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 38.5W Gate charge: 63nC Gate-source voltage: ±30V Pulsed drain current: 60A Drain current: 9.5A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDPF15N65 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 60A; 38.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220FP On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 38.5W Gate charge: 63nC Gate-source voltage: ±30V Pulsed drain current: 60A Drain current: 9.5A |
Produkt ist nicht verfügbar |