FDPF2D3N10C ONSEMI
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Privatkunde |
|---|---|
| 10+ | 8.97 EUR |
| 12+ | 7.32 EUR |
| 13+ | 6.56 EUR |
| 25+ | 5.95 EUR |
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Technische Details FDPF2D3N10C ONSEMI
Description: MOSFET N-CH 100V 222A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220F, Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 222A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Vgs(th) (Max) @ Id: 4V @ 700µA, Power Dissipation (Max): 45W (Tc).
Weitere Produktangebote FDPF2D3N10C nach Preis ab 5.59 EUR bis 13.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FDPF2D3N10C | onsemi / Fairchild |
MOSFETs PTNG N-CH 100V/120V |
auf Bestellung 832 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF2D3N10C | onsemi |
Description: MOSFET N-CH 100V 222A TO220F Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220F Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 222A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Vgs(th) (Max) @ Id: 4V @ 700µA Power Dissipation (Max): 45W (Tc) |
auf Bestellung 721 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDPF2D3N10C |
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Hersteller: onsemi / Fairchild
MOSFETs PTNG N-CH 100V/120V
MOSFETs PTNG N-CH 100V/120V
auf Bestellung 832 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.71 EUR |
| 10+ | 9.64 EUR |
| 100+ | 7.47 EUR |
| 500+ | 6.37 EUR |
| FDPF2D3N10C |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 222A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 700µA
Power Dissipation (Max): 45W (Tc)
Description: MOSFET N-CH 100V 222A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 700µA
Power Dissipation (Max): 45W (Tc)
auf Bestellung 721 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.36 EUR |
| 10+ | 9.06 EUR |
| 100+ | 6.62 EUR |
| 500+ | 5.59 EUR |