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FDPF52N20T onsemi


FDP52N20%2C%20FDPF52N20T.pdf
Hersteller: onsemi
Description: MOSFET N-CH 200V 52A TO220F
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 38.5W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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Technische Details FDPF52N20T onsemi

Description: MOSFET N-CH 200V 52A TO220F, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 38.5W (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.

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FDPF52N20T FDPF52N20T onsemi / Fairchild fdpf52n20t-1192166.pdf MOSFET 200V N-Channel
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FDPF52N20T fdpf52n20t-1192166.pdf
Hersteller: onsemi / Fairchild
MOSFET 200V N-Channel
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Im Einkaufswagen  Stück im Wert von  UAH