FDPF8D5N10C onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 76A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 2.4W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 76A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 3+ | 6.3 EUR |
| 10+ | 5.3 EUR |
| 100+ | 4.28 EUR |
| 500+ | 3.81 EUR |
| 1000+ | 3.26 EUR |
| 2000+ | 3.07 EUR |
| 5000+ | 2.95 EUR |
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Technische Details FDPF8D5N10C onsemi
Description: MOSFET N-CH 100V 76A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 4V @ 130µA, Power Dissipation (Max): 2.4W (Ta), 35W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 76A, 10V, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote FDPF8D5N10C
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FDPF8D5N10C | ON Semiconductor |
|
auf Bestellung 880 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDPF8D5N10C |
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Hersteller: ON Semiconductor
auf Bestellung 880 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
