Technische Details FDR842P FAIRCHILD
Description: MOSFET P-CH 12V 11A SUPERSOT8, Packaging: Tape & Reel (TR), Package / Case: 8-LSOP (0.130", 3.30mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 4.5V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SuperSOT™-8, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 6 V.
Weitere Produktangebote FDR842P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FDR842P | Hersteller : FAIRCHILD |
 SO-8 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
||
| FDR842P | Hersteller : FAIRCHILD |
SOT-223 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
FDR842P | Hersteller : onsemi |
Description: MOSFET P-CH 12V 11A SUPERSOT8 Packaging: Tape & Reel (TR) Package / Case: 8-LSOP (0.130", 3.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 4.5V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-8 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 6 V |
Produkt ist nicht verfügbar |