auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.29 EUR |
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Technische Details FDS2734 ON Semiconductor
Description: MOSFET N-CH 250V 3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 117mOhm @ 3A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 100 V.
Weitere Produktangebote FDS2734 nach Preis ab 1.39 EUR bis 4.81 EUR
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FDS2734 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 250V 3A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS2734 | Hersteller : onsemi |
Description: MOSFET N-CH 250V 3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 117mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 100 V |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS2734 | Hersteller : onsemi |
Description: MOSFET N-CH 250V 3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 117mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 100 V |
auf Bestellung 11729 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS2734 | Hersteller : onsemi / Fairchild |
MOSFET 250V 3.0A 117 OHM NCH ULTRAFE |
auf Bestellung 14834 Stücke: Lieferzeit 14-28 Tag (e) |
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FDS2734 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 3A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDS2734 | Hersteller : Fairchild |
Transistor N-Channel MOSFET; 250V; 20V; 225mOhm; 3A; 2,5W; -55°C ~ 150°C; FDS2734 TFDS2734 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS2734 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 3A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS2734 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 3A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS2734 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 3A; 2.5W; SO8 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 45nC Technology: UltraFET® Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 250V Drain current: 3A On-state resistance: 0.225Ω Type of transistor: N-MOSFET Power dissipation: 2.5W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDS2734 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 3A; 2.5W; SO8 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 45nC Technology: UltraFET® Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 250V Drain current: 3A On-state resistance: 0.225Ω Type of transistor: N-MOSFET Power dissipation: 2.5W |
Produkt ist nicht verfügbar |