Weitere Produktangebote FDS3672 nach Preis ab 1.13 EUR bis 3.72 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FDS3672 | onsemi |
 Description: MOSFET N-CH 100V 7.5A 8SOICInput Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 25 V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS3672 | Fairchild |
Transistor N-Channel MOSFET; 100V; 20V; 43mOhm; 7,5A; 2,5W; -55°C ~ 150°C; FDS3672 TFDS3672 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS3672 | onsemi |
Description: MOSFET N-CH 100V 7.5A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 46375 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS3672 | onsemi / Fairchild |
MOSFETs 100V 7.5a .22 Ohms/VGS=1V |
auf Bestellung 22185 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDS3672 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 7.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 25 V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Description: MOSFET N-CH 100V 7.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 25 V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.15 EUR |
| 5000+ | 1.13 EUR |
| FDS3672 |
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Hersteller: Fairchild
Transistor N-Channel MOSFET; 100V; 20V; 43mOhm; 7,5A; 2,5W; -55°C ~ 150°C; FDS3672 TFDS3672
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 100V; 20V; 43mOhm; 7,5A; 2,5W; -55°C ~ 150°C; FDS3672 TFDS3672
Anzahl je Verpackung: 10 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.2 EUR |
| FDS3672 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 7.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 7.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 46375 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.64 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.67 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.26 EUR |
| FDS3672 |
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Hersteller: onsemi / Fairchild
MOSFETs 100V 7.5a .22 Ohms/VGS=1V
MOSFETs 100V 7.5a .22 Ohms/VGS=1V
auf Bestellung 22185 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.72 EUR |
| 10+ | 2.51 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.26 EUR |