Technische Details FDS4675-F085 ON Semiconductor / Fairchild
Description: MOSFET P-CH 40V 11A 8SOIC, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.4W (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote FDS4675-F085
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
FDS4675-F085 | onsemi |
Description: MOSFET P-CH 40V 11A 8SOICQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
FDS4675-F085 | onsemi |
Description: MOSFET P-CH 40V 11A 8SOICQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDS4675-F085 |
![]() |
Hersteller: onsemi
Description: MOSFET P-CH 40V 11A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 11A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS4675-F085 |
![]() |
Hersteller: onsemi
Description: MOSFET P-CH 40V 11A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 40V 11A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


