FDS4685
Produktcode: 82291
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote FDS4685 nach Preis ab 0.42 EUR bis 2.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FDS4685 | onsemi |
Description: MOSFET P-CH 40V 8.2A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1872 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 8.2A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS4685 | onsemi |
Description: MOSFET P-CH 40V 8.2A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1872 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 8.2A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 8794 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS4685 | onsemi / Fairchild |
MOSFETs 40V PCH POWER TRENCH MOSFET |
auf Bestellung 6867 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS4685 | Fairchild |
Transistor P-Channel MOSFET; 40V; 20V; 42mOhm; 8,2A; 2,5W; -55°C ~ 150°C; FDS4685 TFDS4685 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4685 | ONSEMI |
Description: ONSEMI - FDS4685 - Leistungs-MOSFET, p-Kanal, 40 V, 8.2 A, 0.027 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 8.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 1.6V Verlustleistung: 1.2W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.027ohm |
auf Bestellung 21316 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDS4685 |
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Hersteller: onsemi
Description: MOSFET P-CH 40V 8.2A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1872 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 8.2A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1872 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.48 EUR |
| 5000+ | 0.44 EUR |
| 7500+ | 0.42 EUR |
| FDS4685 |
|
Hersteller: onsemi
Description: MOSFET P-CH 40V 8.2A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1872 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 40V 8.2A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1872 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 8794 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.65 EUR |
| 18+ | 1.18 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.54 EUR |
| FDS4685 |
|
Hersteller: onsemi / Fairchild
MOSFETs 40V PCH POWER TRENCH MOSFET
MOSFETs 40V PCH POWER TRENCH MOSFET
auf Bestellung 6867 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.71 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 0.92 EUR |
| 2500+ | 0.9 EUR |
| FDS4685 |
|
Hersteller: Fairchild
Transistor P-Channel MOSFET; 40V; 20V; 42mOhm; 8,2A; 2,5W; -55°C ~ 150°C; FDS4685 TFDS4685
Anzahl je Verpackung: 10 Stücke
Transistor P-Channel MOSFET; 40V; 20V; 42mOhm; 8,2A; 2,5W; -55°C ~ 150°C; FDS4685 TFDS4685
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.23 EUR |
| FDS4685 |
|
Hersteller: ONSEMI
Description: ONSEMI - FDS4685 - Leistungs-MOSFET, p-Kanal, 40 V, 8.2 A, 0.027 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 8.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 1.2W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.027ohm
Description: ONSEMI - FDS4685 - Leistungs-MOSFET, p-Kanal, 40 V, 8.2 A, 0.027 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 8.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 1.6V
Verlustleistung: 1.2W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.027ohm
auf Bestellung 21316 Stücke:
Lieferzeit 14-21 Tag (e)