FDS4897AC ON Semiconductor

Description: MOSFET N/P-CH 40V 6.1A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A, Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V, Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.