FDS4897AC Fairchild
Hersteller: Fairchild
Transistor N/P-Channel MOSFET; 40V; 20V; 39mOhm/65mOhm; 6,1A/5,2A; 2W; -55°C ~ 150°C; FDS4897AC TFDS4897ac
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 1.34 EUR |
Produktrezensionen
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Technische Details FDS4897AC Fairchild
Description: MOSFET N/P-CH 40V 6.1A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A, Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V, Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote FDS4897AC
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
FDS4897AC | onsemi |
Description: MOSFET N/P-CH 40V 6.1A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
FDS4897AC | onsemi |
Description: MOSFET N/P-CH 40V 6.1A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A Drain to Source Voltage (Vdss): 40V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FDS4897AC | onsemi / Fairchild |
MOSFET 40V Dual N & P Chan PowerTrench |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDS4897AC |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 40V 6.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 40V 6.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS4897AC |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 40V 6.1A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 40V 6.1A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS4897AC |
|
Hersteller: onsemi / Fairchild
MOSFET 40V Dual N & P Chan PowerTrench
MOSFET 40V Dual N & P Chan PowerTrench
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH