FDS6676AS-G onsemi
Hersteller: onsemi
Description: 30V N-CHANNEL POWERTRENCH SYNCFE
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
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Technische Details FDS6676AS-G onsemi
Description: 30V N-CHANNEL POWERTRENCH SYNCFE, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Last Time Buy, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 6mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V.
Weitere Produktangebote FDS6676AS-G nach Preis ab 1.15 EUR bis 1.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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|---|---|---|---|---|---|---|---|---|---|---|---|
| FDS6676AS_G | ON Semiconductor | FDS6676AS-G |
auf Bestellung 1052 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDS6676AS_G |
Hersteller: ON Semiconductor
FDS6676AS-G
FDS6676AS-G
auf Bestellung 1052 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 379+ | 1.43 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.15 EUR |
