| Anzahl | Preis |
|---|---|
| 250+ | 2.17 EUR |
| 500+ | 1.97 EUR |
| 1000+ | 1.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS6685 ON Semiconductor
Description: MOSFET P-CH 30V 8.8A 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1604 pF @ 15 V.
Weitere Produktangebote FDS6685 nach Preis ab 1.79 EUR bis 2.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
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FDS6685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R |
auf Bestellung 2106 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R |
auf Bestellung 4410 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6685 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6685 | Hersteller : Fairchild Semiconductor |
Description: MOSFET P-CH 30V 8.8A 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1604 pF @ 15 V |
auf Bestellung 19131 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6685 | Hersteller : ONSEMI |
Description: ONSEMI - FDS6685 - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 19131 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDS6685 | Hersteller : FAIRCHILD |
SO-8 |
auf Bestellung 41000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6685 | Hersteller : onsemi |
Description: MOSFET P-CH 30V 8.8A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1604 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDS6685 | Hersteller : onsemi / Fairchild |
MOSFET SO-8 SGL P-CH -30V |
Produkt ist nicht verfügbar |



