| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.12 EUR |
| 10+ | 1.82 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.12 EUR |
| 2500+ | 1.05 EUR |
| 5000+ | 1 EUR |
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Technische Details FDS6875 onsemi / Fairchild
Description: MOSFET 2P-CH 20V 6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote FDS6875 nach Preis ab 1.11 EUR bis 2.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FDS6875 | onsemi |
 Description: MOSFET 2P-CH 20V 6A 8SOICSupplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2350 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDS6875 |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.51 EUR |
| 11+ | 2.06 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.11 EUR |