Technische Details FDS6898A-NF40 FAIR
Description: MOSFET 2N-CH 20V 9.4A 8SOIC, Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 9.4A, Drain to Source Voltage (Vdss): 20V, Power - Max: 900mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote FDS6898A-NF40
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDS6898A_NF40 | onsemi |
Description: MOSFET 2N-CH 20V 9.4A 8SOICConfiguration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V Current - Continuous Drain (Id) @ 25°C: 9.4A Drain to Source Voltage (Vdss): 20V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDS6898A_NF40 |
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Hersteller: onsemi
Description: MOSFET 2N-CH 20V 9.4A 8SOIC
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET 2N-CH 20V 9.4A 8SOIC
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH


