FDS6900AS-G onsemi

Description: MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A, Drain to Source Voltage (Vdss): 30V, Power - Max: 900mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).