Technische Details FDS6910 ON Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 7.5A, Power dissipation: 1.6W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 20mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FDS6910
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FDS6910 | Hersteller : ON Semiconductor / Fairchild |
 MOSFET Dual N-Ch LogicLevel PowerTrench MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6910 | Hersteller : ON Semiconductor |
Description: MOSFET 2N-CH 30V 7.5A 8SOIC |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6910 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDS6910 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |