FDS6910 onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details FDS6910 onsemi
Description: MOSFET 2N-CH 30V 7.5A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Rds On (Max) @ Id, Vgs: 13mOhm @ 7.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 7.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 900mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote FDS6910
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDS6910 | onsemi |
Description: MOSFET 2N-CH 30V 7.5A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 7.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.5A Drain to Source Voltage (Vdss): 30V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FDS6910 | onsemi / Fairchild |
MOSFETs Dual N-Ch LogicLevel PowerTrench MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FDS6910 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8 Case: SO8 Kind of channel: enhancement Kind of package: reel; tape Type of transistor: N-MOSFET x2 Mounting: SMD On-state resistance: 20mΩ Power dissipation: 1.6W Drain current: 7.5A Gate-source voltage: ±20V Drain-source voltage: 30V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDS6910 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS6910 |
|
Hersteller: onsemi / Fairchild
MOSFETs Dual N-Ch LogicLevel PowerTrench MOSFET
MOSFETs Dual N-Ch LogicLevel PowerTrench MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS6910 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8
Case: SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Mounting: SMD
On-state resistance: 20mΩ
Power dissipation: 1.6W
Drain current: 7.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 7.5A; 1.6W; SO8
Case: SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Mounting: SMD
On-state resistance: 20mΩ
Power dissipation: 1.6W
Drain current: 7.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH