Technische Details FDS6911 ON Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; Idm: 20A; 1.6W; SO8, Type of transistor: N-MOSFET x2, Technology: PowerTrench®, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 7.5A, Pulsed drain current: 20A, Power dissipation: 1.6W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 20mΩ, Mounting: SMD, Gate charge: 24nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: logic level, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FDS6911
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FDS6911 | Hersteller : ON Semiconductor |
 Description: MOSFET 2N-CH 20V 7.5A 8SOIC |
auf Bestellung 13803 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6911 | Hersteller : ON Semiconductor / Fairchild |
MOSFET LOW VOLTAGE |
auf Bestellung 3767 Stücke: Lieferzeit 14-28 Tag (e) |
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FDS6911 | Hersteller : ON Semiconductor |
Description: MOSFET 2N-CH 20V 7.5A 8SOIC |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDS6911 | Hersteller : FAIRCHILD |
09+ |
auf Bestellung 1618 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS6911 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; Idm: 20A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.5A Pulsed drain current: 20A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDS6911 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.5A; Idm: 20A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.5A Pulsed drain current: 20A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |