FDS6990A Fairchild
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 2.2 EUR |
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Technische Details FDS6990A Fairchild
Description: MOSFET 2N-CH 30V 7.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.5A, Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V, Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Weitere Produktangebote FDS6990A
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FDS6990A Produktcode: 170942 |
Transistoren > MOSFET N-CH |
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FDS6990A | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC T/R |
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FDS6990A | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 2500 Stücke |
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| FDS6990A | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC T/R |
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FDS6990A | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 7.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
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FDS6990A | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 7.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
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FDS6990A | Hersteller : Fairchild Semiconductor |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
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FDS6990A | Hersteller : onsemi / Fairchild |
MOSFET SO-8 DUAL N-CH 30V |
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FDS6990A | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |