Technische Details FDS6990AS ONS/FAI
Description: MOSFET 2N-CH 30V 7.5A 8SOIC, Drain to Source Voltage (Vdss): 30V, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V, Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 7.5A, Power - Max: 900mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote FDS6990AS
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
FDS6990AS | onsemi |
 Description: MOSFET 2N-CH 30V 7.5A 8SOICDrain to Source Voltage (Vdss): 30V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.5A Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
FDS6990AS | onsemi |
Description: MOSFET 2N-CH 30V 7.5A 8SOIC Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.5A Drain to Source Voltage (Vdss): 30V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FDS6990AS | onsemi / Fairchild |
MOSFETs 30V DUAL N-CH. FET 18 MO SO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDS6990AS |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Drain to Source Voltage (Vdss): 30V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Drain to Source Voltage (Vdss): 30V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS6990AS |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS6990AS |
|
Hersteller: onsemi / Fairchild
MOSFETs 30V DUAL N-CH. FET 18 MO SO8
MOSFETs 30V DUAL N-CH. FET 18 MO SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH