Technische Details FDS8333C FAIRCHILD
Description: MOSFET N/P-CH 30V 4.1A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A, Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 10V, Rds On (Max) @ Id, Vgs: 80mOhm @ 4.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote FDS8333C
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FDS8333C | Hersteller : FAIRCHILD |
 09+ |
auf Bestellung 748 Stücke: Lieferzeit 21-28 Tag (e) |
||
| FDS8333C | Hersteller : FAIRCHILD |
SO-8 |
auf Bestellung 41000 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
FDS8333C | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 30V 4.1A/3.4A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
|
 |
FDS8333C | Hersteller : onsemi |
Description: MOSFET N/P-CH 30V 4.1A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 4.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
|
 |
FDS8333C | Hersteller : onsemi / Fairchild |
MOSFETs N & PCh PowerTrench 3V |
Produkt ist nicht verfügbar |