Technische Details FDS8333C FAIRCHILD
Description: MOSFET N/P-CH 30V 4.1A 8SOIC, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 80mOhm @ 4.1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A, Drain to Source Voltage (Vdss): 30V, Power - Max: 900mW, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote FDS8333C
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FDS8333C | ONS/FAI |
Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
FDS8333C | onsemi |
Description: MOSFET N/P-CH 30V 4.1A 8SOICOperating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 80mOhm @ 4.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A Drain to Source Voltage (Vdss): 30V Power - Max: 900mW Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
FDS8333C | onsemi / Fairchild |
MOSFETs N & PCh PowerTrench 3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDS8333C |
![]() |
Hersteller: ONS/FAI
Транзистори
Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS8333C |
![]() |
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 4.1A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Description: MOSFET N/P-CH 30V 4.1A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDS8333C |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs N & PCh PowerTrench 3V
MOSFETs N & PCh PowerTrench 3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



