FDS8447 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 12.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.97 EUR |
| 5000+ | 0.93 EUR |
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Technische Details FDS8447 onsemi
Description: MOSFET N-CH 40V 12.8A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote FDS8447 nach Preis ab 0.94 EUR bis 2.36 EUR
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FDS8447 | Hersteller : ON-Semiconductor |
Transistor N-Channel MOSFET; 40V; 20V; 15mOhm; 12,8A; 2,5W; -55°C ~ 150°C; FDS8447 TFDS8447 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS8447 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; 2.5W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 49nC On-state resistance: 15mΩ Power dissipation: 2.5W Drain current: 12.8A Gate-source voltage: ±20V Drain-source voltage: 40V Kind of package: reel; tape |
auf Bestellung 1585 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS8447 | Hersteller : onsemi |
Description: MOSFET N-CH 40V 12.8A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.8A, 10V Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 12452 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS8447 | Hersteller : onsemi / Fairchild |
MOSFET 40V Single N-Channel PowerTrench MOSFET |
auf Bestellung 26074 Stücke: Lieferzeit 10-14 Tag (e) |
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