FDS8840NZ onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 18.6A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7535 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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Technische Details FDS8840NZ onsemi
Description: MOSFET N-CH 40V 18.6A 8SOIC, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 7535 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote FDS8840NZ nach Preis ab 0.97 EUR bis 3.5 EUR
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FDS8840NZ | onsemi / Fairchild |
MOSFETs PT4 Nch with Zener |
auf Bestellung 22694 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS8840NZ | onsemi |
MOSFETs PT4 Nch with Zener |
auf Bestellung 20012 Stücke: Lieferzeit 10-14 Tag (e) |
|
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FDS8840NZ | onsemi |
Description: MOSFET N-CH 40V 18.6A 8SOICInput Capacitance (Ciss) (Max) @ Vds: 7535 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18.6A, 10V Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 4936 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDS8840NZ |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs PT4 Nch with Zener
MOSFETs PT4 Nch with Zener
auf Bestellung 22694 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.94 EUR |
| 10+ | 1.73 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.09 EUR |
| 2500+ | 1.03 EUR |
| 5000+ | 0.97 EUR |
| FDS8840NZ |
![]() |
Hersteller: onsemi
MOSFETs PT4 Nch with Zener
MOSFETs PT4 Nch with Zener
auf Bestellung 20012 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.6 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 1.02 EUR |
| FDS8840NZ |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 40V 18.6A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 7535 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 18.6A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 7535 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4936 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.5 EUR |
| 10+ | 2.38 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.31 EUR |


