FDS8840NZ onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 18.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7535 pF @ 20 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.56 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS8840NZ onsemi
Description: MOSFET N-CH 40V 18.6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18.6A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7535 pF @ 20 V.
Weitere Produktangebote FDS8840NZ nach Preis ab 1.15 EUR bis 4.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDS8840NZ | onsemi / Fairchild |
MOSFETs PT4 Nch with Zener |
auf Bestellung 22694 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FDS8840NZ | onsemi |
Description: MOSFET N-CH 40V 18.6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18.6A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7535 pF @ 20 V |
auf Bestellung 4936 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FDS8840NZ | onsemi |
MOSFETs PT4 Nch with Zener |
auf Bestellung 18240 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDS8840NZ |
|
Hersteller: onsemi / Fairchild
MOSFETs PT4 Nch with Zener
MOSFETs PT4 Nch with Zener
auf Bestellung 22694 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.31 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.3 EUR |
| 2500+ | 1.23 EUR |
| 5000+ | 1.15 EUR |
| FDS8840NZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 18.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7535 pF @ 20 V
Description: MOSFET N-CH 40V 18.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7535 pF @ 20 V
auf Bestellung 4936 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.16 EUR |
| 10+ | 2.83 EUR |
| 100+ | 2.03 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.56 EUR |
| FDS8840NZ |
|
Hersteller: onsemi
MOSFETs PT4 Nch with Zener
MOSFETs PT4 Nch with Zener
auf Bestellung 18240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.46 EUR |
| 10+ | 2.87 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.46 EUR |
| 2500+ | 1.38 EUR |