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FDS8842NZ

FDS8842NZ onsemi

fds8842nz-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 40V 14.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.56 EUR
5000+0.52 EUR
7500+0.5 EUR
12500+0.48 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDS8842NZ onsemi

Description: MOSFET N-CH 40V 14.9A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 14.9A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V.

Weitere Produktangebote FDS8842NZ nach Preis ab 0.55 EUR bis 1.76 EUR

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FDS8842NZ FDS8842NZ onsemi / Fairchild fds8842nz-d.pdf MOSFETs 40V NCh PowerTrench w/MOSFET
auf Bestellung 4835 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.76 EUR
10+1.18 EUR
100+0.9 EUR
500+0.73 EUR
1000+0.62 EUR
2500+0.57 EUR
5000+0.55 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDS8842NZ FDS8842NZ onsemi fds8842nz-d.pdf Description: MOSFET N-CH 40V 14.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDS8842NZ fds8842nz-d.pdf
FDS8842NZ
Hersteller: onsemi / Fairchild
MOSFETs 40V NCh PowerTrench w/MOSFET
auf Bestellung 4835 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.76 EUR
10+1.18 EUR
100+0.9 EUR
500+0.73 EUR
1000+0.62 EUR
2500+0.57 EUR
5000+0.55 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FDS8842NZ fds8842nz-d.pdf
FDS8842NZ
Hersteller: onsemi
Description: MOSFET N-CH 40V 14.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH