auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS89161 ON Semiconductor
Description: MOSFET 2N-CH 100V 2.7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.7A, Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V, Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote FDS89161 nach Preis ab 0.76 EUR bis 2.73 EUR
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FDS89161 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS89161 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS89161 | Hersteller : onsemi |
Description: MOSFET 2N-CH 100V 2.7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS89161 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC T/R |
auf Bestellung 2273 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS89161 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Power dissipation: 31W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.1nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: 100V Drain current: 2.7A On-state resistance: 176mΩ Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2255 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS89161 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Power dissipation: 31W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.1nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: 100V Drain current: 2.7A On-state resistance: 176mΩ Type of transistor: N-MOSFET x2 |
auf Bestellung 2255 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS89161 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC T/R |
auf Bestellung 2273 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS89161 | Hersteller : onsemi |
Description: MOSFET 2N-CH 100V 2.7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 8407 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS89161 | Hersteller : onsemi / Fairchild |
MOSFETs 100V Dual N-Channel PowerTrench MOSFET |
auf Bestellung 13511 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS89161 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDS89161 | Hersteller : Fairchild |
Transistor 2xN-Channel MOSFET; 100V; 20V; 176mOhm; 2,7A; 31W; -55°C ~ 150°C; FDS89161 TFDS89161 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS89161 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS89161 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 2.7A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |