Technische Details FDS8949-F085 ON Semiconductor / Fairchild
Description: MOSFET 2N-CH 40V 6A 8SOIC, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V, Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 6A, Drain to Source Voltage (Vdss): 40V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote FDS8949-F085
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
FDS8949-F085 | onsemi |
Description: MOSFET 2N-CH 40V 6A 8SOICPart Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 40V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDS8949-F085 |
![]() |
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 6A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 40V 6A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



